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Journal of Photonics for Energy

Process optimization of doping conditions for (100) P-type monocrystalline silicon solar cell using response surface methodology
Author(s): Khuram Ali; Sohail A. Khan; Mohd Zubir Mat Jafri
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Paper Abstract

The effect of time and temperature on the sheet resistance (R S ) and carrier concentration (N A ) of (100) P-type monocrystalline Si was investigated. Phosphorus-doped n + -emitters were fabricated through solid-source doping in a quartz tube furnace. The process variable values for 13 runs were proposed by response surface methodology (RSM). The optimized values for time and temperature predicted by RSM were 56 min and 1045°C, respectively, for a sheet resistance of 41.7  Ω/□ and a carrier concentration of 3.7E18  cm −3 . Optimization-based fabrication was found to be in close agreement with the optimized values. Parameter optimization using RSM could be valuable in achieving predetermined dopant variables in optoelectronic devices as well as in reducing the surface recombinations and series resistance of highly efficient Si solar cells.

Paper Details

Date Published: 22 October 2013
PDF: 10 pages
J. Photon. Energy 3(1) 032099 doi: 10.1117/1.JPE.3.032099
Published in: Journal of Photonics for Energy Volume 3, Issue 1
Show Author Affiliations
Khuram Ali, Univ. Sains Malaysia (Malaysia)
Sohail A. Khan, Univ. Sains Malaysia (Malaysia)
Mohd Zubir Mat Jafri, Univ. Sains Malaysia (Malaysia)

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