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Journal of Nanophotonics • Open Access

Group-IV midinfrared plasmonics
Author(s): Paolo Biagioni; Jacopo Frigerio; Antonio Samarelli; Kevin Gallacher; Leonetta Baldassarre; Emilie Sakat; Eugenio Calandrini; Ross W. Millar; Valeria Giliberti; Giovanni Isella; Douglas J. Paul; Michele Ortolani

Paper Abstract

The use of heavily doped semiconductors to achieve plasma frequencies in the mid-IR has been recently proposed as a promising way to obtain high-quality and tunable plasmonic materials. We introduce a plasmonic platform based on epitaxial n-type Ge grown on standard Si wafers by means of low-energy plasma-enhanced chemical vapor deposition. Due to the large carrier concentration achieved with P dopants and to the compatibility with the existing CMOS technology, SiGe plasmonics hold promises for mid-IR applications in optoelectronics, IR detection, sensing, and light harvesting. As a representative example, we show simulations of mid-IR plasmonic waveguides based on the experimentally retrieved dielectric constants of the grown materials.

Paper Details

Date Published: 23 February 2015
PDF: 6 pages
J. Nanophoton. 9(1) 093789 doi: 10.1117/1.JNP.9.093789
Published in: Journal of Nanophotonics Volume 9, Issue 1
Show Author Affiliations
Paolo Biagioni, Politecnico di Milano (Italy)
Jacopo Frigerio, Politecnico di Milano (Italy)
Antonio Samarelli, Univ. of Glasgow (United Kingdom)
Kevin Gallacher, Univ. of Glasgow (United Kingdom)
Leonetta Baldassarre, Istituto Italiano di Tecnologia (Italy)
Emilie Sakat, Politecnico di Milano (Italy)
Eugenio Calandrini, Univ. degli Studi di Roma La Sapienza (Italy)
Ross W. Millar, Univ. of Glasgow (United Kingdom)
Valeria Giliberti, Sapienza Univ. di Roma (Italy)
Giovanni Isella, Politecnico di Milano (Italy)
Douglas J. Paul, Univ. of Glasgow (United Kingdom)
Michele Ortolani, Sapienza Univ. di Roma (Italy)


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