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Journal of Nanophotonics • Open Access

Heterojunction of poly (o-toluidine) and silicon nanowires
Author(s): Salah E. El-Zohary; Mohamed A. Shenashen; Ashraf M. Haleem; Akinori Tsuji; Toshihiro Okamoto; Masanobu Haraguchi

Paper Abstract

A nanostructured poly (o-toluidine)/silicon nanowires (NPOT/SiNWs) heterojunction has been fabricated with a low cost and simple techniques, where NPOT has been in situ polymerized upon SiNWs synthesized by chemical etching of a silicon wafer. The morphology of SiNWs before and after deposition of NPOT has been examined by scanning electron microscope (SEM). The chemical composition of NPOT has been investigated by Fourier transform infrared (FTIR), ultraviolet-visible (UV-visible) spectroscopy, and X-ray diffraction (XRD) techniques. NPOT morphology has also been examined by SEM before being deposited on the SiNWs. I-V measurements of the device have been made at room temperature under dark conditions. The heterojunction diode parameters such as turn-on voltage, reverse saturation current (I0), ideality factor (η), barrier height (ΦB) and series resistance (Rs) have been determined from the I−V curves using Schottky equations. The device shows promising characteristics as a candidate for producing heterojunction diodes.

Paper Details

Date Published: 3 February 2015
PDF: 12 pages
J. Nanophoton. 9(1) 093093 doi: 10.1117/1.JNP.9.093093
Published in: Journal of Nanophotonics Volume 9, Issue 1
Show Author Affiliations
Salah E. El-Zohary, The Univ. of Tokushima (Japan)
Tanta Univ. (Egypt)
Mohamed A. Shenashen, The Univ. of Tokushima (Japan)
Egyptian Petroleum Research Institute (Egypt)
Ashraf M. Haleem, Fayoum Univ. (Egypt)
Akinori Tsuji, The Univ. of Tokushima (Japan)
Toshihiro Okamoto, The Univ. of Tokushima (Japan)
Masanobu Haraguchi, The Univ. of Tokushima (Japan)

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