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Journal of Nanophotonics

Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography
Author(s): Ahmed Fadil; Yiyu Ou; Teng Zhan; Kaiyu Wu; Dmitry Suyatin; Weifang Lu; Paul Michael Petersen; Zhiqiang Liu; Haiyan Ou
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Paper Abstract

Surface-patterning technologies have enabled the improvement of currently existing light-emitting diodes (LEDs) and can be used to overcome the issue of low quantum efficiency of green GaN-based LEDs. We have applied nanosphere lithography to fabricate nanopillars on InGaN/GaN quantum-well LEDs. By etching through the active region, it is possible to improve both the light extraction efficiency and, in addition, the internal quantum efficiency through the effects of lattice strain relaxation. Nanopillars of different sizes are fabricated and analyzed using Raman spectroscopy. We have shown that nanopillar LEDs can be significantly improved by applying a combination of ion-damage curing techniques, including thermal and acidic treatment, and have analyzed their effects using x-ray photoelectron spectroscopy.

Paper Details

Date Published: 7 August 2015
PDF: 9 pages
J. Nanophoton. 9(1) 093062 doi: 10.1117/1.JNP.9.093062
Published in: Journal of Nanophotonics Volume 9, Issue 1
Show Author Affiliations
Ahmed Fadil, Technical Univ. of Denmark (Denmark)
Yiyu Ou, DTU Fotonik (Denmark)
Teng Zhan, Institute of Semiconductors (China)
Kaiyu Wu, Technical Univ. of Denmark (Denmark)
Dmitry Suyatin, Lund Univ. (Sweden)
Weifang Lu, DTU Fotonik (Denmark)
Paul Michael Petersen, DTU Fotonik (Denmark)
Zhiqiang Liu, Institute of Semiconductors (China)
Haiyan Ou, DTU Fotonik (Denmark)


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