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Journal of Nanophotonics

Luminescence enhancement of nanocrystal quantum wells by bandgap and strain engineering
Author(s): Xian-An Cao; Yifei Lu
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Paper Abstract

CdSe-based nanocrystal quantum wells (QWs) were synthesized around CdS nanocrystal quantum dots and were bandgap- and strain-engineered to achieve high-efficiency short-wavelength luminescence. Tuning the CdSe QW width in the range of 1.05 to 1.58 nm has led to blue-green light emission, whose quantum yield was improved up to 48% through strain compensation by an optimized ZnS outer shell. The luminescence spectrum can be modified by adding a ZnS inner barrier layer to block charge and exciton transfer between the QW and CdS core. Strain management by adjusting the well and barrier thickness has proven critical in such a complex multilayer quantum system for obtaining high-quality nanocrystals and light emission.

Paper Details

Date Published: 16 September 2015
PDF: 8 pages
J. Nanophoton. 9(1) 093052 doi: 10.1117/1.JNP.9.093052
Published in: Journal of Nanophotonics Volume 9, Issue 1
Show Author Affiliations
Xian-An Cao, West Virginia Univ. (United States)
Yifei Lu, West Virginia Univ. (United States)

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