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Journal of Nanophotonics

Refractive index of laser active region based on InAs/InGaAs quantum dots
Author(s): Nikita Yu Gordeev; Oleg I. Rumyantsev; Ivan G. Savenko; Alexey S. Payusov; Fedor I. Zubov; Mikhail V. Maximov; Alexey E. Zhukov
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Paper Abstract

The effective refractive index of the active region of 1.3 μm edge-emitting tilted wave lasers based on InAs/InGaAs self-assembled quantum dots by the analysis of the far-field pattern is investigated. The obtained values of 3.485 and 3.487 in the operating lasers and in the cold waveguides, respectively, are well comparable with the refractive index of bulk InAs at corresponding wavelength.

Paper Details

Date Published: 18 July 2013
PDF: 7 pages
J. Nanophoton. 7(1) 073087 doi: 10.1117/1.JNP.7.073087
Published in: Journal of Nanophotonics Volume 7, Issue 1
Show Author Affiliations
Nikita Yu Gordeev, Ioffe Physico-Technical Institute (Russian Federation)
Oleg I. Rumyantsev, Stanford Univ. (United States)
Ivan G. Savenko, Univ. of Iceland (Iceland)
Alexey S. Payusov, Ioffe Physico-Technical Institute (Russian Federation)
Fedor I. Zubov, St. Petersburg Academic Univ. (Russian Federation)
Mikhail V. Maximov, Ioffe Physico-Technical Institute (Russian Federation)
Alexey E. Zhukov, St. Petersburg Academic Univ. (Russian Federation)

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