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Journal of Nanophotonics

Lateral variation of interface disorder in wetting layer on formation of InAs/InP quantum dots visualized by near-field imaging spectroscopy
Author(s): Hiroki Tojinbara; Motoki Takahashi; Nobuhiro Tsumori; Dai Mizuno; Ryosuke Kubota; Toshiharu Saiki; Yoshiki Sakuma
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Paper Abstract

Near-field photoluminescence imaging spectroscopy of a wetting layer of InAs/InP quantum dots (QDs) at the critical thickness of 2.4 monolayers (ML) is used to visualize the spatial variation of the interface disorder. The wetting layer has a significantly lower density of carrier localization centers than a 2-ML thick InAs/InP quantum well, particularly in the vicinity of the QDs. This indicates that atomic-scale interface disorder is reduced during the initial stages of QD formation; in contrast, disorder remained far from the QDs.

Paper Details

Date Published: 16 October 2012
PDF: 7 pages
J. Nanophoton. 6(1) 063521 doi: 10.1117/1.JNP.6.063521
Published in: Journal of Nanophotonics Volume 6, Issue 1
Show Author Affiliations
Hiroki Tojinbara, Keio Univ. (Japan)
Motoki Takahashi, Keio Univ. (Japan)
Nobuhiro Tsumori, Keio Univ. (Japan)
Dai Mizuno, Keio Univ. (Japan)
Ryosuke Kubota, Keio Univ. (Japan)
Toshiharu Saiki, Keio Univ. (Japan)
Yoshiki Sakuma, National Institute for Materials Science (Japan)

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