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Journal of Nanophotonics • Open Access

Electroluminescence from Er3+ incorporated into silicon oxide thin film on silicon in a scanning tunneling microscope
Author(s): Jan Fiala; Hiroo Omi; Takehiko Tawara

Paper Abstract

A scanning tunneling microscope (STM) with an electrically conductive and optically transparent probe was used to study electroluminescence induced by tunneling electrons from erbium oxide (Er3O3) deposited on SiO2/Si(100). Erbium was primarily incorporated into SiO2 on silicon substrate to create impurities and overcome a high band gap. Subsequently, emissions of photons in the visible/near-infrared region, because of the excitation of higher Er states, are realized electrically without the need to apply high voltage. The STM-induced photon emission exhibits an asymmetric character with respect to the applied bias, which is explained by the direct recombination and impact ionization processes. The observed electroluminescence spectrum was decomposed to identify single inter-band transitions that could be related to erbium states. STM-induced electron emission measurements were also performed, revealing a band gap of around 2.8 eV. This corresponds to the x = 0.91 rate factor of the SiOx layer created during the annealing process on silicon.

Paper Details

Date Published: 5 March 2012
PDF: 9 pages
J. Nanophoton. 6(1) 063503 doi: 10.1117/1.JNP.6.063503
Published in: Journal of Nanophotonics Volume 6, Issue 1
Show Author Affiliations
Jan Fiala, NTT Basic Research Labs. (Japan)
Hiroo Omi, NTT Basic Research Labs. (Japan)
Takehiko Tawara, NTT Basic Research Labs. (Japan)

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