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Journal of Nanophotonics

Absorption enhancement in InGaN-based photonic crystal-implemented solar cells
Author(s): Tamara F. Gundogdu; Mutlu Gökkavas; Ekmel Özbay
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Paper Abstract

We investigate the absorption characteristics of InGaN solar cells with high indium (0.8) content and a one-dimensional periodic nano-scale pattern (implemented) in the InGaN layer theoretically. The short-circuit current of our InGaN-based solar cell structure is calculated for different lattice constant, etch depth, and fill factor values. A substantial increase in the absorption (17.5% increase in short-circuit current) is achieved when the photonic crystal pattern is thoroughly optimized.

Paper Details

Date Published: 26 July 2012
PDF: 10 pages
J. Nanophoton. 6(1) 061603 doi: 10.1117/1.JNP.6.061603
Published in: Journal of Nanophotonics Volume 6, Issue 1
Show Author Affiliations
Tamara F. Gundogdu, Bilkent Univ. (Turkey)
Mutlu Gökkavas, Bilkent Univ. (Turkey)
Ekmel Özbay, Bilkent Univ. (Turkey)

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