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Journal of Nanophotonics • Open Access

Electrical control simulation of near infrared emission in SOI-MOSFET quantum well devices
Author(s): Michael Bendayan; Roi Sabo; Roei Zolberg; Ya'akov M. Mandelbaum; Avraham Regis Chelly; Avi Karsenty

Paper Abstract

In the race to realize ultrahigh-speed processors, silicon photonics research is part of the efforts. Overcoming the silicon indirect bandgap with special geometry, we developed a concept of a metal–oxide–semiconductor field-effect transistor, based on a silicon quantum well structure that enables control of light emission. This quantum well consists of a recessed ultrathin silicon layer, obtained by a gate-recessed channel and limited between two oxide layers. The device’s coupled optical and electrical properties have been simulated for channel thicknesses, varying from 2 to 9 nm. The results show that this device can emit near infrared radiation in the 1 to

Paper Details

Date Published: 23 August 2017
PDF: 14 pages
J. Nanophoton. 11(3) 036016 doi: 10.1117/1.JNP.11.036016
Published in: Journal of Nanophotonics Volume 11, Issue 3
Show Author Affiliations
Michael Bendayan, Rafael Advanced Defense Systems Ltd. (Israel)
Roi Sabo, Jerusalem College of Technology (Israel)
Roei Zolberg, Jerusalem College of Technology (Israel)
Ya'akov M. Mandelbaum, Jerusalem College of Technology (Israel)
Avraham Regis Chelly, Bar-Ilan Univ. (Israel)
Avi Karsenty, Jerusalem College of Technology (Israel)

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