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Journal of Nanophotonics

Analytical expressions for the luminescence of dilute quaternary InAs(N,Sb) semiconductors
Author(s): Chijioke I. Oriaku; Timothy J. Spencer; Xu Yang; Jorge P. Zubelli; Mauro F. Pereira
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Paper Abstract

We calculate the luminescence of the dilute quaternary InAs(N,Sb). The incorporation of N leads to a reduction of the energy gap of the host InAs and Sb acts as a surfactant, improves the N incorporation, and further reduces the bandgap. This is thus extremely relevant for devices operating in the mid-infrared (MIR) spectral range from 3 to 5    μ m . In order to describe this system, the theory starts with the band anticrossing model applied to both conduction and the valence band to generate inputs for analytical approximations that lead to luminescence spectra, including plasma screening, bandgap renormalization, and excitonic enhancements. Direct application of the equations leads to good agreement with some recent experimental data.

Paper Details

Date Published: 3 May 2017
PDF: 8 pages
J. Nanophoton. 11(2) 026005 doi: 10.1117/1.JNP.11.026005
Published in: Journal of Nanophotonics Volume 11, Issue 2
Show Author Affiliations
Chijioke I. Oriaku, Sheffield Hallam Univ. (United Kingdom)
Michael Okpara Univ. of Agriculture (Nigeria)
Timothy J. Spencer, Sheffield Hallam Univ. (United Kingdom)
Xu Yang, IMPA (Brazil)
Jorge P. Zubelli, IMPA (Brazil)
Mauro F. Pereira, Sheffield Hallam Univ. (United Kingdom)

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