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Journal of Nanophotonics • Open Access

Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics
Author(s): Ahmad A. Al-Jabr; Pawan Mishra; Muhammad Abdulmajid; Tien Khee Ng; Boon S. Ooi

Paper Abstract

We achieved considerable laser diode (LD) improvement after annealing InGaP/InAlGaP laser structure at 950°C for a total annealing time of 2 min. The photoluminescence intensity is increased by 10 folds and full-wave at half-maximum is reduced from ∼30 to 20 nm. The measured LDs exhibited significantly reduced threshold current (Ith), from 2 to 1.5 A for a 1-mm long LD, improved internal efficiency (ηi), from 63% to 68%, and increased internal losses αi, from 14.3 to 18.6  cm−1. Our work suggests that the use of strain-induced quantum well intermixing is a viable solution for high-efficiency AlGaInP devices at shorter wavelengths. The advent of laser-based solid-state lighting (SSL) and visible-light communications (VLC) highlighted the importance of the current findings, which are aimed at improving color quality and photodetector received power in SSL and VLC, respectively, via annealed red LDs.

Paper Details

Date Published: 28 July 2016
PDF: 8 pages
J. Nanophoton. 10(3) 036004 doi: 10.1117/1.JNP.10.036004
Published in: Journal of Nanophotonics Volume 10, Issue 3
Show Author Affiliations
Ahmad A. Al-Jabr, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Pawan Mishra, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Muhammad Abdulmajid, Effat Univ. (Saudi Arabia)
King Abdullah Univ. of Science and Technology (Saudi Arabia)
Tien Khee Ng, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Boon S. Ooi, King Abdullah Univ. of Science and Technology (Saudi Arabia)


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