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Journal of Nanophotonics

Fast optoelectronic responsivity of metal-oxide-semiconductor nanostructures
Author(s): Aviya Bennett; Avraham R. Chelly; Avi Karsenty; Ilan Gadasi; Zvi Priel; Ya'akov M. Mandelbaum; Tiecheng Lu; Issai Shlimak; Zeev Zalevsky
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Paper Abstract

The frequency dependence of the capacitance variation between dark and near-infrared-modulated illumination conditions is measured for metal-oxide-semiconductor structures with germanium nanocrystals embedded in a thick SiO2 film grown on a silicon substrate. The results have shown that the device is expected to be sensitive at high frequencies (up to 111 GHz) making it a good candidate for optoelectronic high-speed use and for optical communication applications.

Paper Details

Date Published: 6 July 2016
PDF: 8 pages
J. Nanophoton. 10(3) 036001 doi: 10.1117/1.JNP.10.036001
Published in: Journal of Nanophotonics Volume 10, Issue 3
Show Author Affiliations
Aviya Bennett, Bar-Ilan Univ. (Israel)
Avraham R. Chelly, Bar-Ilan Univ. (Israel)
Avi Karsenty, Jerusalem College of Technology (Israel)
Ilan Gadasi, Jerusalem College of Technology (Israel)
Zvi Priel, Jerusalem College of Technology (Israel)
Ya'akov M. Mandelbaum, Jerusalem College of Technology (Israel)
Tiecheng Lu, Sichuan Univ. (China)
Issai Shlimak, Bar-Ilan Univ. (Israel)
Zeev Zalevsky, Bar-Ilan Univ. (Israel)

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