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Journal of Nanophotonics

In-situ height engineering of InGaAs/GaAs quantum dots by chemical beam epitaxy
Author(s): Jihene Zribi; Denis Morris; Bouraoui Ilahi; Amal Aldhubaib; Vincent Aimez; Richard Ares
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Paper Abstract

This work reports on a chemical beam epitaxy growth study of InGaAs/GaAs quantum dots (QDs) engineered using an in-situ indium-flush technique. The emission energy of these structures has been selectively tuned over 225 meV by varying the dot height from 7 to 2 nm. A blueshift of the photoluminescence (PL) emission peak and a decrease of the intersublevel spacing energy are observed when the dot height is reduced. Numerical investigations of the influence of dot structural parameters on their electronic structure have been carried out by solving the single-particle one-band effective mass Schrödinger equation in cylindrical coordinates, for lens-shaped QDs. The correlation between numerical calculations and PL results is used to better describe the influence of the In-flush technique on both the dot height and the dot composition.

Paper Details

Date Published: 18 February 2016
PDF: 9 pages
J. Nanophoton. 10(3) 033502 doi: 10.1117/1.JNP.10.033502
Published in: Journal of Nanophotonics Volume 10, Issue 3
Show Author Affiliations
Jihene Zribi, Univ. de Sherbrooke (Canada)
Denis Morris, Univ. de Sherbrooke (Canada)
Bouraoui Ilahi, King Saud Univ. (Saudi Arabia)
Amal Aldhubaib, King Saud Univ. (Saudi Arabia)
Vincent Aimez, Univ. de Sherbrooke (Canada)
Richard Ares, Univ. de Sherbrooke (Canada)


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