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Journal of Nanophotonics

Photoabsorption by the electronic subsystem of semiconductor quantum dots
Author(s): Sergey V. Sakhno; Mordko A. Kozhushner; Vladimir S. Posvyanskii; Leonid I. Trakhtenberg
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Paper Abstract

The cross section for photoabsorption by a semiconductor quantum dot has been calculated with the previously obtained densities of electrons in the surface traps, conduction electrons, and electrons in unionized impurities. It has been found that the total photoabsorption cross section has two characteristic maxima corresponding to absorption by conduction electrons and by electrons in traps in the bulk of the quantum dot. The contribution of electrons in traps on the surface of the quantum dot is small and manifests itself only in a relatively short-wavelength range of the spectrum.

Paper Details

Date Published: 23 May 2016
PDF: 8 pages
J. Nanophoton. 10(2) 026018 doi: 10.1117/1.JNP.10.026018
Published in: Journal of Nanophotonics Volume 10, Issue 2
Show Author Affiliations
Sergey V. Sakhno, Moscow Institute of Physics and Technology (Russia)
Mordko A. Kozhushner, N.N. Semenov Institute of Chemical Physics (Russia)
Vladimir S. Posvyanskii, N.N. Semenov Institute of Chemical Physics (Russia)
Leonid I. Trakhtenberg, Moscow Institute of Physics and Technology (Russian Federation)
N.N. Semenov Institute of Chemical Physics (Russian Federation)
Karpov Institute of Physical Chemistry (Russian Federation)


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