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Journal of Nanophotonics

Structural and optical properties of silicon metal-oxide-semiconductor light-emitting devices
Author(s): Kaikai Xu; Zhengyuan Zhang; Zhengping Zhang
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Paper Abstract

A silicon p-channel metal oxide semiconductor field-effect transistor (Si-PMOSFET) that is fully compatible with the standard complementary metal oxide semiconductor process is investigated based on the phenomenon of optical radiation observed in the reverse-biased p–n junction in the Si-PMOSFET device. The device can be used either as a two-terminal silicon diode light-emitting device (Si-diode LED) or as a three-terminal silicon gate-controlled diode light-emitting device (Si gate-controlled diode LED). It is seen that the three-terminal operating mode could provide much higher power transfer efficiency than the two-terminal operating mode. A new solution based on the concept of a theoretical quantum efficiency model combined with calculated results is proposed for interpreting the evidence of light intensity reduction at high operating voltages. The Si-LED that can be easily integrated into CMOS fabrication process is an important step toward optical interconnects.

Paper Details

Date Published: 27 January 2016
PDF: 10 pages
J. Nanophoton. 10(1) 016002 doi: 10.1117/1.JNP.10.016002
Published in: Journal of Nanophotonics Volume 10, Issue 1
Show Author Affiliations
Kaikai Xu, State Key Lab. of Electronic Thin Films & Integrated Devices (China)
Zhengyuan Zhang, Sichuan Solid-State Circuit Research Institute (China)
Zhengping Zhang, Sichuan Solid-State Circuit Research Institute (China)


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