Share Email Print

Journal of Nanophotonics

Atomic layer deposition of TiO2 and Al2O3 on nanographite films: structure and field emission properties
Author(s): Victor I. Kleshch; Rinat R. Ismagilov; Elena A. Smolnikova; Ekaterina A. Obraztsova; Feruza Tuyakova; Alexander N. Obraztsov
Format Member Price Non-Member Price
PDF $20.00 $25.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Atomic layer deposition (ALD) of metal oxides (MO) was used to modify the properties of nanographite (NG) films produced by direct current plasma–enhanced chemical vapor deposition technique. NG films consist of a few layers of graphene flakes (nanowalls) and nanoscrolls homogeneously distributed over a silicon substrate with a predominantly vertical orientation of graphene sheets to the substrate surface. TiO2 and Al2O3 layers, with thicknesses in the range of 50 to 250 nm, were deposited on NG films by ALD. The obtained NG-MO composite materials were characterized by scanning electron microscopy, energy dispersive x-ray analysis, and Raman spectroscopy. It was found that ALD forms a uniform coating on graphene flakes, while on the surface of needle-like nanoscrolls it forms spherical nanoparticles. Field emission properties of the films were measured in a flat vacuum diode configuration. Analysis based on obtained current–voltage characteristics and electrostatic calculations show that emission from NG-TiO2 films is determined by the nanoscrolls protruding from the TiO2 coverage. The TiO2 layers with thicknesses of <200  nm almost do not affect the overall field emission characteristics of the films. At the same time, these layers are able to stabilize the NG films’ surface and can lead to an improvement of the NG cold cathode performance in vacuum electronics.

Paper Details

Date Published: 5 November 2015
PDF: 12 pages
J. Nanophoton. 10(1) 012509 doi: 10.1117/1.JNP.10.012509
Published in: Journal of Nanophotonics Volume 10, Issue 1
Show Author Affiliations
Victor I. Kleshch, Lomonosov Moscow State Univ. (Russia)
Rinat R. Ismagilov, Lomonosov Moscow State Univ. (Russia)
Elena A. Smolnikova, Lomonosov Moscow State Univ. (Russia)
Ekaterina A. Obraztsova, Shemyakin-Ovchinnikov Institute of Bioorganic Chemistry (Russia)
National Univ of Science and Technology "MISiS" (Russia)
A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences (Russia)
Feruza Tuyakova, Moscow State Institute of Radiotechnics, Electronics and Automation (Russia)
Univ. of Eastern Finland (Finland)
Alexander N. Obraztsov, Lomonosov Moscow State Univ. (Russia)
Univ. of Eastern Finland (Finland)

© SPIE. Terms of Use
Back to Top