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### Journal of Micro/Nanolithography, MEMS, and MOEMS • new

Influence of a wrinkle in terms of critical dimension variation caused by transmission nonuniformity and a particle defect on extreme ultraviolet pellicle
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Paper Abstract

An extreme ultraviolet (EUV) pellicle is needed for the protection of EUV masks from defects, contaminants, and particles during the exposure process. However, the EUV pellicle can be easily deformed during the exposure process because it has an extremely thin thickness for high transmission of EUV lights. Due to the very thin thickness and the weak structure of the pellicle, a pellicle is easily deformed; a wrinkled pellicle causes an image distortion, which leads to critical dimension (CD) variation. In addition, a particle defect on an EUV pellicle can result from scanner building materials. Added materials of the particle defect on an EUV pellicle can also cause image distortion and CD variation. We investigated the impact of wrinkles and particle defects on the transmission and CD variation for the 5- and 3-nm nodes of isomorphic and anamorphic numerical aperture (NA) systems. The variation in transmission and the critical size of the particle defect with a wrinkled EUV pellicle were calculated to obtain the requirement of a CD variation of 0.2 nm for a EUV pellicle. As a result, a change in transmission of 1.9% (after two pass) resulted in a 0.2-nm variation in the CD for the anamorphic NA system (3-nm node), whereas a transmission variation of 1.3% (after two pass) caused a 0.2-nm CD variation in the isomorphic NA system (5-nm node). From these results, an allowable local tilt angle can be calculated; the allowable local tilt angle of an isomorphic NA system is 0.31 rad and that of an anamorphic NA system is 0.41 rad. When the particle defect is added on a wrinkled EUV pellicle, the critical size of the particle defect is $1.2 μ m$ for the 5-nm node and $2.2 μ m$ for the 3-nm node.

Paper Details

Date Published: 12 October 2017
PDF: 4 pages
J. Micro/Nanolith. MEMS MOEMS 16(4) 041008 doi: 10.1117/1.JMM.16.4.041008
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 16, Issue 4
Show Author Affiliations
Guk-Jin Kim, Hanyang Univ. (Republic of Korea)
In-Seon Kim, Hanyang Univ. (Republic of Korea)
Sung-Gyu Lee, Hanyang Univ. (Republic of Korea)
Michael Yeung, Fastlitho Inc. (United States)
Min-Su Kim, Hanyang Univ. (Republic of Korea)
Jin-Goo Park, Hanyang Univ. (Republic of Korea)
Hye-Keun Oh, Hanyang Univ. (Republic of Korea)