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Journal of Micro/Nanolithography, MEMS, and MOEMS

Optical proximity correction for anamorphic extreme ultraviolet lithography
Author(s): Chris Clifford; Michael Lam; Ananthan Raghunathan; Fan Jiang; Germain Fenger; Kostas Adam
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Paper Abstract

The change from isomorphic to anamorphic optics in high numerical aperture extreme ultraviolet scanners necessitates changes to the mask data preparation flow. The required changes for each step in the mask tape out process are discussed, with a focus on optical proximity correction (OPC). When necessary, solutions to new problems are demonstrated and verified by rigorous simulation. Additions to the OPC model include accounting for anamorphic effects in the optics, mask electromagnetics, and mask manufacturing. The correction algorithm is updated to include awareness of anamorphic mask geometry for mask rule checking. OPC verification through process window conditions is enhanced to test different wafer scale mask error ranges in the horizontal and vertical directions. This work will show that existing models and methods can be updated to support anamorphic optics without major changes. Also, the larger mask size in the Y direction can result in better model accuracy, easier OPC convergence, and designs that are more tolerant to mask errors.

Paper Details

Date Published: 19 August 2017
PDF: 9 pages
J. Micro/Nanolith. MEMS MOEMS 16(4) 041004 doi: 10.1117/1.JMM.16.4.041004
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 16, Issue 4
Show Author Affiliations
Chris Clifford, Mentor Graphics Corp. (United States)
Michael Lam, Mentor Graphics Corp. (United States)
Ananthan Raghunathan, Mentor Graphics Corp. (United States)
Fan Jiang, Mentor Graphics Corp. (United States)
Germain Fenger, Mentor Graphics Corp. (United States)
Kostas Adam, Mentor Graphics Corp. (United States)


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