Share Email Print

Journal of Micro/Nanolithography, MEMS, and MOEMS • Open Access • new

Low-power, low-pressure reactive-ion etching process for silicon etching with vertical and smooth walls for mechanobiology application
Author(s): Mohammed Ashraf; Sree V. Sundararajan; Gianluca Grenci

Paper Abstract

We report our findings in developing a low-power etching recipe using a newly acquired reactive-ion etching (RIE) tool (RIE-10NR, Samco, Japan), with the aim of achieving smooth and vertical sidewalls in micropatterned silicon substrate. We used a combination of CF4, SF6, and O2 gases, which at low power (30 W) and low pressure (2 Pa) allowed for vertical silicon etching (aspect ratio ∼2). We used photoresist and silicon oxide as the etching masks. As it is a continuous etching process, scalloping effects were not present, which is contrary to the process done with an inductively coupled plasma-based “Bosch” approach. We also show a successful use of these microstructures as master mold in soft-lithographic techniques for producing devices in elastomeric materials that have applications in mechanobiology. To the best of our knowledge, the recipe we present here has the lowest combination of power and pressure for etching silicon with vertical profile using a standard, parallel plates RIE tool.

Paper Details

Date Published: 10 July 2017
PDF: 8 pages
J. Micro/Nanolith. 16(3) 034501 doi: 10.1117/1.JMM.16.3.034501
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 16, Issue 3
Show Author Affiliations
Mohammed Ashraf, National Univ. of Singapore (Singapore)
Sree V. Sundararajan, National Univ. of Singapore (Singapore)
Gianluca Grenci, National Univ. of Singapore (Singapore)

© SPIE. Terms of Use
Back to Top