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Journal of Micro/Nanolithography, MEMS, and MOEMS • new

Nanofabrication of 10-nm T-shaped gates using a double patterning process with electron beam lithography and dry etch
Author(s): Jinhai Shao; Jianan Deng; W. Lu; Yifang Chen
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Paper Abstract

A process to fabricate T-shaped gates with the footprint scaling down to 10 nm using a double patterning procedure is reported. One of the keys in this process is to separate the definition of the footprint from that for the gate-head so that the proximity effect originated from electron forward scattering in the resist is significantly minimized, enabling us to achieve as narrow as 10-nm foot width. Furthermore, in contrast to the reported technique for 10-nm T-shaped profile in resist, this process utilizes a metallic film with a nanoslit as an etch mask to form a well-defined 10-nm-wide foot in a SiNx layer by reactive ion etch. Such a double patterning process has demonstrated enhanced reliability. The detailed process is comprehensively described, and its advantages and limitations are discussed. Nanofabrication of InP-based high-electron-mobility transistors using the developed process for 10- to 20-nm T-shaped gates is currently under the way.

Paper Details

Date Published: 12 September 2017
PDF: 5 pages
J. Micro/Nanolith. MEMS MOEMS 16(3) 033508 doi: 10.1117/1.JMM.16.3.033508
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 16, Issue 3
Show Author Affiliations
Jinhai Shao, Fudan Univ. (China)
Jianan Deng, Fudan Univ. (China)
W. Lu, Ohio State Univ. (United States)
Yifang Chen, Fudan Univ. (China)

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