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Journal of Micro/Nanolithography, MEMS, and MOEMS

Enabling full-field physics-based optical proximity correction via dynamic model generation
Author(s): Michael Lam; Chris Clifford; Ananthan Raghunathan; Germain Fenger; Kostas Adam
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Paper Abstract

As extreme ultraviolet lithography becomes closer to reality for high volume production, its peculiar modeling challenges related to both inter and intrafield effects have necessitated building an optical proximity correction (OPC) infrastructure that operates with field position dependency. Previous state-of-the-art approaches to modeling field dependency used piecewise constant models where static input models are assigned to specific x/y-positions within the field. OPC and simulation could assign the proper static model based on simulation-level placement. However, in the realm of 7 and 5 nm feature sizes, small discontinuities in OPC from piecewise constant model changes can cause unacceptable levels of edge placement errors. The introduction of dynamic model generation (DMG) can be shown to effectively avoid these dislocations by providing unique mask and optical models per simulation region, allowing a near continuum of models through the field. DMG allows unique models for electromagnetic field, apodization, aberrations, etc. to vary through the entire field and provides a capability to precisely and accurately model systematic field signatures.

Paper Details

Date Published: 25 July 2017
PDF: 7 pages
J. Micro/Nanolith. MEMS MOEMS 16(3) 033502 doi: 10.1117/1.JMM.16.3.033502
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 16, Issue 3
Show Author Affiliations
Michael Lam, Mentor Graphics Corp. (United States)
Chris Clifford, Mentor Graphics Corp. (United States)
Ananthan Raghunathan, Mentor Graphics Corp. (United States)
Germain Fenger, Mentor Graphics Corp. (United States)
Kostas Adam, Mentor Graphics Corp. (United States)


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