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Journal of Micro/Nanolithography, MEMS, and MOEMS • new

High-precision CD measurement using energy-filtering SEM techniques
Author(s): Daisuke Bizen; Makoto Sakakibara; Makoto Suzuki; Yoshinori Momonoi; Hajime Kawano
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Paper Abstract

Voltage contrast (VC) images obtained using an energy filter (EF) were used to measure the bottom surface of high-aspect-ratio structures. The VC images obtained using the conventional EF were sensitive to variations in wafer potential. Since CD-SEM metrology requires precise EF voltage control when using VC images, we developed an EF voltage correction method to be used at each measurement point. Consequently, bottom-edge measurement, independent of the wafer potential fluctuations, was achieved using the newly developed EF. Our developed technique is effective for CD-SEM metrology using VC images.

Paper Details

Date Published: 29 June 2017
PDF: 5 pages
J. Micro/Nanolith. 16(2) 024004 doi: 10.1117/1.JMM.16.2.024004
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 16, Issue 2
Show Author Affiliations
Daisuke Bizen, Hitachi, Ltd. (Japan)
Makoto Sakakibara, Hitachi, Ltd. (Japan)
Makoto Suzuki, Hitachi High-Tech Science Corp. (Japan)
Yoshinori Momonoi, Hitachi High-Technologies Corp. (Japan)
Hajime Kawano, Hitachi High-Technologies Corp. (Japan)


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