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Journal of Micro/Nanolithography, MEMS, and MOEMS • new

Via patterning in the 7-nm node using immersion lithography and graphoepitaxy directed self-assembly
Author(s): Jan Doise; Joost Bekaert; Boon Teik Chan; Masafumi Hori; Roel Gronheid
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Paper Abstract

Insertion of a graphoepitaxy directed self-assembly process as a via patterning technology into integrated circuit fabrication is seriously considered for the 7-nm node and beyond. At these dimensions, a graphoepitaxy process using a cylindrical block copolymer that enables hole multiplication can alleviate costs by extending 193-nm immersion-based lithography and significantly reducing the number of masks that would be required per layer. To be considered for implementation, it needs to be proved that this approach can achieve the required pattern quality in terms of defects and variability using a representative, aperiodic design. The patterning of a via layer from an actual 7-nm node logic layout is demonstrated using immersion lithography and graphoepitaxy directed self-assembly in a fab-like environment. The performance of the process is characterized in detail on a full 300-mm wafer scale. The local variability in an edge placement error of the obtained patterns (4.0 nm 3 σ for singlets) is in line with the recent results in the field and significantly less than of the prepattern (4.9 nm 3 σ for singlets). In addition, it is expected that pattern quality can be further improved through an improved mask design and optical proximity correction. No major complications for insertion of the graphoepitaxy directed self-assembly into device manufacturing were observed.

Paper Details

Date Published: 14 June 2017
PDF: 8 pages
J. Micro/Nanolith. 16(2) 023506 doi: 10.1117/1.JMM.16.2.023506
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 16, Issue 2
Show Author Affiliations
Jan Doise, KU Leuven (Belgium)
IMEC (Belgium)
Joost Bekaert, IMEC (Belgium)
Boon Teik Chan, IMEC (Belgium)
Masafumi Hori, JSR Micro N.V. (Belgium)
Roel Gronheid, IMEC (Belgium)


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