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Journal of Micro/Nanolithography, MEMS, and MOEMS

Development and characterization of resonator- and delay lines-based sensors on AlN/sapphire substrate for high-temperature application
Author(s): Jie Liu; Bin Yang; Jingquan Liu; Xiang Chen; Xiaolin Wang; Chunsheng Yang
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Paper Abstract

The performance of an AlN/sapphire temperature sensor operated at high temperature is investigated. To optimize the output performance, several different structural surface acoustic wave devices are fabricated, including one-port resonator and delay lines with various gaps. The effects of the electromechanical coupling coefficient (K2), insertion loss, and temperature coefficient of frequency on temperatures are demonstrated in detail. K2 increases with the increasing of the temperature and the insertion loss increases at the beginning, but decreases at higher temperatures due to the influence of the rising K2. The frequency responses of both the resonator and delay lines show very good linearity with temperature and both of them exhibit excellent stability.

Paper Details

Date Published: 14 October 2016
PDF: 5 pages
J. Micro/Nanolith. MEMS MOEMS 15(4) 045002 doi: 10.1117/1.JMM.15.4.045002
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 15, Issue 4
Show Author Affiliations
Jie Liu, Shanghai Jiao Tong Univ. (China)
Bin Yang, Shanghai Jiao Tong Univ. (China)
Jingquan Liu, Shanghai Jiao Tong Univ. (China)
Xiang Chen, Shanghai Jiao Tong Univ. (China)
Xiaolin Wang, Shanghai Jiao Tong Univ. (China)
Chunsheng Yang, Shanghai Jiao Tong Univ. (China)

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