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Journal of Micro/Nanolithography, MEMS, and MOEMS

Energy deposition in ultrathin extreme ultraviolet resist films: extreme ultraviolet photons and keV electrons
Author(s): David F. Kyser; Nicholas K. Eib; Nicholas W. M. Ritchie
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Paper Abstract

The absorbed energy density (eV/cm3) deposited by extreme ultraviolet (EUV) photons and electron beam (EB) high-keV electrons is proposed as a metric for characterizing the sensitivity of EUV resist films. Simulations of energy deposition are used to calculate the energy density as a function of the incident aerial flux (EUV: mJ/cm2, EB: μC/cm2). Monte Carlo calculations for electron exposure are utilized, and a Lambert–Beer model for EUV absorption. The ratio of electron flux to photon flux which results in equivalent energy density is calculated for a typical organic chemically amplified resist film and a typical inorganic metal-oxide film. This ratio can be used to screen EUV resist materials with EB measurements and accelerate advances in EUV resist systems.

Paper Details

Date Published: 23 August 2016
PDF: 6 pages
J. Micro/Nanolith. MEMS MOEMS 15(3) 033507 doi: 10.1117/1.JMM.15.3.033507
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 15, Issue 3
Show Author Affiliations
David F. Kyser, Consultant (United States)
Nicholas K. Eib, Consultant (United States)
Nicholas W. M. Ritchie, National Institute of Standards and Technology (United States)


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