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Journal of Micro/Nanolithography, MEMS, and MOEMS

Anisotropic shadow effects with various pattern directions in an anamorphic high numerical aperture system
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Paper Abstract

A high numerical aperture (NA) system with an NA larger than 0.5 is required to make patterns of 1X nm and below, even though extreme ultraviolet lithography uses a 13.5-nm wavelength source. To avoid the reflective efficiency loss and to avoid an increase in the chief ray angle of incident light, use of an anamorphic high-NA system is suggested. The suggested anamorphic NA system has nonisotropic magnification, x-magnification of and y-magnification of , and the mask NA shape is an ellipse due to the nonisotropic magnification distribution. Anamorphic NA systems have a nonconventional shadow effect due to nonisotropic incident angle distribution and magnification. These nonisotropic characteristics lead to the reduction of asymmetric shadow distribution and a reduction of horizontal–vertical bias. As a result, anamorphic NA systems can achieve balanced patterning results regardless of pattern direction and incident direction.

Paper Details

Date Published: 1 August 2016
PDF: 6 pages
J. Micro/Nanolith. MEMS MOEMS 15(3) 033504 doi: 10.1117/1.JMM.15.3.033504
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 15, Issue 3
Show Author Affiliations
In-Seon Kim, Hanyang Univ. (Republic of Korea)
Guk-Jin Kim, Hanyang Univ. (Republic of Korea)
Michael Yeung, Fastlitho Inc. (United States)
Eytan Barouch, Boston Univ. (United States)
Seong-Wook Kim, Hanyang Univ. (Republic of Korea)
Hye-Keun Oh, Hanyang Univ. (Korea, Republic of)


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