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Journal of Micro/Nanolithography, MEMS, and MOEMS

Virtual fabrication using directed self-assembly for process optimization in a 14-nm dynamic random access memory
Author(s): Mattan Kamon; Mustafa B. Akbulut; Yiguang Yan; Daniel Faken; Andras Pap; Vasanth Allampalli; Ken Greiner; David M. Fried
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Paper Abstract

For directed self-assembly (DSA) to be deployed in advanced semiconductor technologies, it must reliably integrate into a full process flow. We present a methodology for using virtual fabrication software, including predictive DSA process models, to develop and analyze the replacement of self-aligned quadruple patterning with Liu–Nealey chemoepitaxy on a 14-nm dynamic random access memory (DRAM) process. To quantify the impact of this module replacement, we investigated a key process yield metric for DRAM, interface area between the capacitor contacts and transistor source/drain. Additionally, we demonstrate virtual fabrication of the DRAM cell’s hexagonally packed capacitors patterned with an array of diblock copolymer cylinders in place of fourfold litho-etch (LE4) patterning.

Paper Details

Date Published: 13 September 2016
PDF: 11 pages
J. Micro/Nanolith. 15(3) 031605 doi: 10.1117/1.JMM.15.3.031605
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 15, Issue 3
Show Author Affiliations
Mattan Kamon, Coventor, Inc. (United States)
Mustafa B. Akbulut, Coventor, Inc. (United States)
Yiguang Yan, Coventor, Inc. (United States)
Daniel Faken, Coventor, Inc. (United States)
Andras Pap, Coventor, Inc. (United States)
Vasanth Allampalli, Coventor, Inc. (United States)
Ken Greiner, Coventor, Inc. (United States)
David M. Fried, Coventor, Inc. (United States)

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