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Journal of Micro/Nanolithography, MEMS, and MOEMS

Placement error in directed self-assembly of block copolymers for contact hole application
Author(s): Shayma Bouanani; Raluca Tiron; Sandra Bos; Ahmed Gharbi; Patricia Pimenta-Barros; Jérôme Hazart; Frédéric Robert; Céline Lapeyre; Alain Ostrovsky; Cédric Monget
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Paper Abstract

Directed self-assembly (DSA) of block copolymers has shown interesting results for contact hole application, as a vertical interconnection access for CMOS sub-10 nm technology. The control of critical dimension uniformity (CDU), defectivity, and placement error (PE) is challenging and depends on multiple processes and material parameters. This paper reports the work done using the 300-mm pilot line available in materials to integrate the DSA process on contact and via level patterning. In the first part, a reliable methodology for PE measurement is defined. By tuning intrinsic edge detection parameters on standard reference images, the working window is determined. The methodology is then implemented to analyze the experimental data. The impact of the planarization process on PE and the importance of PE as a complement of CDU and hole open yield for process window determination are discussed.

Paper Details

Date Published: 27 April 2016
PDF: 8 pages
J. Micro/Nanolith. 15(2) 021407 doi: 10.1117/1.JMM.15.2.021407
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 15, Issue 2
Show Author Affiliations
Shayma Bouanani, STMicroelectronics (France)
CEA-LETI (France)
Raluca Tiron, CEA-LETI (France)
Sandra Bos, CEA-LETI (France)
Ahmed Gharbi, CEA-LETI (France)
Patricia Pimenta-Barros, CEA-LETI (France)
Jérôme Hazart, CEA-LETI (France)
Frédéric Robert, STMicroelectronics (France)
Céline Lapeyre, STMicroelectronics (France)
CEA-LETI (France)
Alain Ostrovsky, STMicroelectronics (France)
Cédric Monget, STMicroelectronics (France)


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