Share Email Print
cover

Journal of Micro/Nanolithography, MEMS, and MOEMS

Mask-induced best-focus shifts in deep ultraviolet and extreme ultraviolet lithography
Author(s): Andreas Erdmann; Peter Evanschitzky; Jens Timo Neumann; Paul Graeupner
Format Member Price Non-Member Price
PDF $20.00 $25.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The mask plays a significant role as an active optical element in lithography, for both deep ultraviolet (DUV) and extreme ultraviolet (EUV) lithography. Mask-induced and feature-dependent shifts of the best-focus position and other aberration-like effects were reported both for DUV immersion and for EUV lithography. We employ rigorous computation of light diffraction from lithographic masks in combination with aerial image simulation to study the root causes of these effects and their dependencies from mask and optical system parameters. Special emphasis is put on the comparison of transmission masks for DUV lithography and reflective masks for EUV lithography, respectively. Several strategies to compensate the mask-induced phase effects are discussed.

Paper Details

Date Published: 1 March 2016
PDF: 11 pages
J. Micro/Nanolith. 15(2) 021205 doi: 10.1117/1.JMM.15.2.021205
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 15, Issue 2
Show Author Affiliations
Andreas Erdmann, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB (Germany)
Peter Evanschitzky, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB (Germany)
Jens Timo Neumann, Carl Zeiss SMT GmbH (Germany)
Paul Graeupner, Carl Zeiss SMT GmbH (Germany)


© SPIE. Terms of Use
Back to Top