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Journal of Micro/Nanolithography, MEMS, and MOEMS

Accurate, full-chip, three-dimensional electromagnetic field model for non-Manhattan mask corners
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Paper Abstract

The physical process of mask manufacturing produces absorber geometry with significant deviations from the 90-deg corners, which are typically assumed in the mask design. The non-Manhattan mask geometry is an essential contributor to the aerial image and resulting patterning performance through focus. Current state-of-the-art models for corner rounding employ “chopping” a 90-deg mask corner, replacing the corner with a small 45-deg edge. A methodology is presented to approximate the impact of three-dimensional (3-D) EMF effects introduced by corners with rounded edges. The approach is integrated into a full-chip 3-D mask simulation methodology based on the domain decomposition method with edge to edge crosstalk correction.

Paper Details

Date Published: 16 February 2016
PDF: 9 pages
J. Micro/Nanolith. MEMS MOEMS 15(2) 021204 doi: 10.1117/1.JMM.15.2.021204
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 15, Issue 2
Show Author Affiliations
Michael C. Lam, Mentor Graphics Corp. (United States)
Chris Clifford, Mentor Graphics Corp. (United States)
Mike Oliver, Mentor Graphics Corp. (United States)
David Fryer, Mentor Graphics Corp. (United States)
Edita Tejnil, Mentor Graphics Corp. (United States)
Kostas Adam, Mentor Graphics Corp. (United States)

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