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Journal of Micro/Nanolithography, MEMS, and MOEMS

Systematic framework for evaluating standard cell middle-of-line robustness for multiple patterning lithography
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Paper Abstract

For robust standard cell design, designers need to improve the intercell compatibility for all combinations of cells and cell placements. Multiple patterning lithography colorability check breaks the locality of traditional rule check, and N-wise checks are strongly needed to verify the colorability for layout interactions across cell boundaries. A systematic framework is proposed to evaluate the library-level robustness over multiple patterning lithography from two perspectives, including complete checks on two-row combinations of cells and long-range interactions. With complete checks on two-row combinations of cells, the vertical and horizontal boundary checks are explored to predict illegal cell combinations. For long-range interactions, random benchmarks are generated by cell shifting and tested to evaluate the placement-level efforts needed to reduce the manufacturing complexity from quadruple patterning lithography to triple patterning lithography for the middle-of-line (MOL) layers. Our framework is tested on the MOL layers but can be easily adapted to other critical layers with multiple patterning lithography constraints.

Paper Details

Date Published: 3 February 2016
PDF: 13 pages
J. Micro/Nanolith. 15(2) 021202 doi: 10.1117/1.JMM.15.2.021202
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 15, Issue 2
Show Author Affiliations
Brian Cline, ARM Inc. (United States)
Xiaoqing Xu, The Univ. of Texas at Austin (United States)
Greg M. Yeric, ARM Inc. (United States)
Bei Yu, The Chinese Univ. of Hong Kong (Hong Kong)
David Z. Pan, The Univ. of Texas at Austin (United States)


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