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Journal of Micro/Nanolithography, MEMS, and MOEMS

Accurate mask model implementation in optical proximity correction model for 14-nm nodes and beyond
Author(s): Nacer Zine El Abidine; Frank Sundermann; Emek Yesilada; Vincent Farys; Frederic Huguennet; Ana-Maria Armeanu; Ingo Bork; Michael Chomat; Peter Buck; Isabelle Schanen
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Paper Abstract

In a previous work, we demonstrated that the current optical proximity correction model assuming the mask pattern to be analogous to the designed data is no longer valid. An extreme case of line-end shortening shows a gap up to 10 nm difference (at mask level). For that reason, an accurate mask model has been calibrated for a 14-nm logic gate level. A model with a total RMS of 1.38 nm at mask level was obtained. Two-dimensional structures, such as line-end shortening and corner rounding, were well predicted using scanning electron microscopy pictures overlaid with simulated contours. The first part of this paper is dedicated to the implementation of our improved model in current flow. The improved model consists of a mask model capturing mask process and writing effects, and a standard optical and resist model addressing the litho exposure and development effects at wafer level. The second part will focus on results from the comparison of the two models, the new and the regular.

Paper Details

Date Published: 27 April 2016
PDF: 8 pages
J. Micro/Nanolith. 15(2) 021011 doi: 10.1117/1.JMM.15.2.021011
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 15, Issue 2
Show Author Affiliations
Nacer Zine El Abidine, STMicroelectronics (France)
Institut de Microélectronique Électromagnétisme et Photonique (France)
Frank Sundermann, STMicroelectronics (France)
Emek Yesilada, STMicroelectronics (France)
Vincent Farys, STMicroelectronics (France)
Frederic Huguennet, Mentor Graphics (Ireland) Ltd. (France)
Ana-Maria Armeanu, Mentor Graphics (Ireland) Ltd. (France)
Ingo Bork, Mentor Graphics Corp. (United States)
Michael Chomat, Mentor Graphics (Ireland) Ltd. (France)
Peter Buck, Mentor Graphics Corp. (United States)
Isabelle Schanen, Institut de Microélectronique Électromagnétisme et Photonique (France)


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