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Journal of Micro/Nanolithography, MEMS, and MOEMS

Study of extreme ultraviolet lithography patterned mask inspection tool for half-pitch 11-nm node defect detection performance
Author(s): Ryoichi Hirano; Susumu Iida; Tsuyoshi Amano; Hidehiro Watanabe; Masahiro Hatakeyama; Takeshi Murakami; Shoji Yoshikawa; Kenichi Suematsu; Kenji Terao
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Paper Abstract

Extreme ultraviolet lithography (EUVL) patterned mask defect detection is one of the major issues to overcome for realization of EUVL-based device fabrication. We have designed projection electron microscope (PEM) optics that have been integrated into a new inspection system called EBEYE-V30 (“Model EBEYE” is EBARA’s model code), and the PEM system performs well in half-pitch (hp) 16-nm node EUVL patterned mask inspection applications. We also discuss the extendibility of this system to 11-nm node defect detection. The progress made in the performance of the PEM optics is not simply about producing an image sensor with higher resolution but is also about improvement of the image processing to enhance the defect signal. A high-speed image sensor, a high-speed image-processing circuit, and a bright and stable electron source are necessary for hp 11-nm defect inspection. We describe the experimental results for EUVL patterned mask inspection using the above system for the hp 11-nm node. Programmed hp 11-nm defects (equivalent to 44 nm on the mask) are used for defect detection sensitivity evaluation. Defects as small as 16 nm on the mask could be detected using the current PEM system configuration.

Paper Details

Date Published: 8 March 2016
PDF: 6 pages
J. Micro/Nanolith. 15(2) 021008 doi: 10.1117/1.JMM.15.2.021008
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 15, Issue 2
Show Author Affiliations
Ryoichi Hirano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Susumu Iida, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsuyoshi Amano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Hidehiro Watanabe, EUVL Infrastructure Development Ctr., Inc. (Japan)
Masahiro Hatakeyama, EBARA Corp. (Japan)
Takeshi Murakami, EBARA Corp. (Japan)
Shoji Yoshikawa, EBARA Corp. (Japan)
Kenichi Suematsu, EBARA Corp. (Japan)
Kenji Terao, EBARA Corp. (Japan)


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