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Journal of Micro/Nanolithography, MEMS, and MOEMS

Printability of buried extreme ultraviolet lithography photomask defects
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Paper Abstract

Native acting phase-programmed defects, otherwise known as buried program defects, with attributes very similar to native defects, were successfully fabricated using a high-accuracy overlay technique. The defect detectability and visibility were analyzed with conventional amplitude and phase-contrast blank inspection at 193-nm wavelength, pattern inspection at 193-nm wavelength, and scanning electron microscopy. The mask was also printed on wafer, and printability is discussed. Finally, the inspection sensitivity and wafer printability are compared, leading to the observation that the current blank- and pattern-inspection sensitivity is not enough to detect all of the printable defects.

Paper Details

Date Published: 1 February 2016
PDF: 7 pages
J. Micro/Nanolith. MEMS MOEMS 15(2) 021004 doi: 10.1117/1.JMM.15.2.021004
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 15, Issue 2
Show Author Affiliations
Kazunori Seki, Toppan Photomasks, Inc. (United States)
Takeshi Isogawa, Toppan Photomasks, Inc. (United States)
Masayuki Kagawa, Toppan Photomasks, Inc. (United States)
Shinji Akima, Toppan Photomasks, Inc. (United States)
Yutaka Kodera, Toppan Printing Co., Ltd. (Japan)
Karen D. Badger, GLOBALFOUNDRIES Inc. (United States)
Zhengqing John Qi, GLOBALFOUNDRIES Inc. (United States)
Mark Lawliss, GLOBALFOUNDRIES Inc. (United States)
Jed H. Rankin, GLOBALFOUNDRIES Inc. (United States)
Ravi K. Bonam, IBM Corp. (United States)

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