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Journal of Micro/Nanolithography, MEMS, and MOEMS

Fabrication and characterization of a microaccelerometer based on resonant-tunneling diodes
Author(s): Mengwei Li; Tao Deng; Kang Du; WeiHang Chu; Jun Liu; Houjin Chen; Zewen Liu
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Paper Abstract

A microaccelerometer based on gallium arsenide (GaAs) resonant-tunneling diodes (RTDs) is demonstrated. The input acceleration signal can be transformed into an output electrical signal using the meso-piezoresistive effects of the RTDs located at the root of the detection beams. Finite element simulations were performed to design, analyze, and optimize the structures of the accelerometer. The accelerometer was fabricated using a combination of GaAs IC surface and bulk micromachining techniques. Vibrating tests and shock tests were conducted to investigate the accelerometer characteristics. The experimental results revealed that the sensitivity of the RTD accelerometer was 7.91  mV/g. The noise resolution was ∼1.264  mg/√Hz, and the working frequency was up to 3 kHz.

Paper Details

Date Published: 19 January 2016
PDF: 6 pages
J. Micro/Nanolith. MEMS MOEMS 15(1) 015001 doi: 10.1117/1.JMM.15.1.015001
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 15, Issue 1
Show Author Affiliations
Mengwei Li, North Univ. of China (China)
Tao Deng, Beijing Jiaotong Univ. (China)
Tsinghua Univ. (China)
Kang Du, North Univ. of China (China)
WeiHang Chu, North Univ. of China (China)
Jun Liu, North Univ. of China (China)
Houjin Chen, Beijing Jiaotong Univ. (China)
Zewen Liu, Tsinghua Univ. (China)

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