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Journal of Micro/Nanolithography, MEMS, and MOEMS

Evaluation of the effect of data quality on the profile uncertainty of critical dimension small angle x-ray scattering
Author(s): Daniel F. Sunday; Scott List; Jasmeet S. Chawla; R. Joseph Kline
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Paper Abstract

A line grating prepared via a self-aligned quadruple patterning method was measured using critical dimension small angle x-ray scattering. A Monte Carlo Markov chain algorithm was used to analyze the uncertainty of the model fit over subsets of the full angular range and for a time series with decreasing signal-to-noise in order to determine the effect of the data quality on the final profile shape uncertainty. These results show how the total measurement time can be reduced while maintaining satisfactory profile shape uncertainty. We found that the typical measurement conditions are highly oversampled and can be reduced considerably with only marginal effect on the shape uncertainty. A comparison is made between the synchrotron measurements and a laboratory system, demonstrating that both measurements result in similar structures.

Paper Details

Date Published: 6 January 2016
PDF: 11 pages
J. Micro/Nanolith. 15(1) 014001 doi: 10.1117/1.JMM.15.1.014001
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 15, Issue 1
Show Author Affiliations
Daniel F. Sunday, National Institute of Standards and Technology (United States)
Scott List, Intel Corp. (United States)
Jasmeet S. Chawla, Intel Corp. (United States)
R. Joseph Kline, National Institute of Standards and Technology (United States)


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