Share Email Print

Journal of Micro/Nanolithography, MEMS, and MOEMS

Coarse-grained molecular dynamics modeling of the kinetics of lamellar block copolymer defect annealing
Author(s): Andrew J. Peters; Richard A. Lawson; Benjamin D. Nation; Peter J. Ludovice; Clifford L. Henderson
Format Member Price Non-Member Price
PDF $20.00 $25.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

State-of-the-art block copolymer (BCP)—directed self-assembly (DSA) methods still yield defect densities orders of magnitude higher than is necessary in semiconductor fabrication despite free-energy calculations that suggest equilibrium defect densities are much lower than is necessary for economic fabrication. This disparity suggests that the main problem may lie in the kinetics of defect removal. This work uses a coarse-grained model to study the rates, pathways, and dependencies of healing a common defect to give insight into the fundamental processes that control defect healing and give guidance on optimal process conditions for BCP-DSA. It is found that bulk simulations yield an exponential drop in defect heal rate above χN∼30. Thin films show no change in rate associated with the energy barrier below χN∼50, significantly higher than the χN values found previously for self-consistent field theory studies that neglect fluctuations. Above χN∼50, the simulations show an increase in energy barrier scaling with 1/2 to 1/3 of the bulk systems. This is because thin films always begin healing at the free interface or the BCP-underlayer interface, where the increased AB contact area associated with the transition state is minimized, while the infinitely thick films cannot begin healing at an interface.

Paper Details

Date Published: 8 March 2016
PDF: 16 pages
J. Micro/Nanolith. MEMS MOEMS 15(1) 013508 doi: 10.1117/1.JMM.15.1.013508
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 15, Issue 1
Show Author Affiliations
Andrew J. Peters, Georgia Institute of Technology (United States)
Richard A. Lawson, Georgia Institute of Technology (United States)
Benjamin D. Nation, Georgia Institute of Technology (United States)
Peter J. Ludovice, Georgia Institute of Technology (United States)
Clifford L. Henderson, Georgia Institute of Technology (United States)

© SPIE. Terms of Use
Back to Top