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Journal of Micro/Nanolithography, MEMS, and MOEMS

Capacitive effective thickness of a few nanometers by atomic layer deposition and device performance in Ge gate-all-around fin field effect transistors
Author(s): Chu-Lin Chu; Bo-Yuan Chen; Yiin-Kuen Fuh
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Paper Abstract

Ge gate-all-around fin field-effect transistors (Ge FinFETs) with a capacitive effective thickness of a few nanometers have been successfully achieved via atomic-layer-deposited (ALD) high-dielectric Al2O3 on GeO2/Ge and by adopting low-cost thermo ALD equipment. The MOS interface properties of the ZrO2 or Al2O3/GeO2/Ge structures have been studied systematically. It has been found that a GeO2 interfacial layer that is greater than approximately 2.5 nm results in a significant degradation of the MOS interfaces, while an equivalent oxide thickness of <3  nm is still possible while maintaining good GeO2/Ge interface quality. The Ge FinFET’s value has been demonstrated with the Al2O3/GeO2/Ge gate stack prepared using a thermal ALD layer of Al2O3. The experimental results indicate that the MOS interface quality obtained with the technique developed for high-permittivity/Ge gate stacks is also extremely useful for the fabrication of triangle-fin complementary metal oxide semiconductor devices. An Ion/Ioff ratio of 3.2×104 and a subthreshold swing of 103  mV/dec were obtained for the triangular n-type Ge gate-all-around FET with (111) sidewalls. The drain current at VGSVT=VDS=−1.5  V is 88  mA/mm.

Paper Details

Date Published: 13 October 2015
PDF: 6 pages
J. Micro/Nanolith. 14(4) 044501 doi: 10.1117/1.JMM.14.4.044501
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 14, Issue 4
Show Author Affiliations
Chu-Lin Chu, National Nano Device Labs. (Taiwan)
Bo-Yuan Chen, National Nano Device Labs. (Taiwan)
Yiin-Kuen Fuh, National Central Univ. (Taiwan)


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