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Journal of Micro/Nanolithography, MEMS, and MOEMS

Studying thickness loss in extreme ultraviolet resists due to electron beam exposure using experiment and modeling
Author(s): Amrit Kasuik Narasimhan; Steven Grzeskowiak; Bharath Srivats; Henry C. Herbol; Liam Wisehart; Jonathon L. Schad; Chris Kelly; William Earley; Leonidas E. Ocola; Mark Neisser; Gregory H. Denbeaux; Robert L. Brainard
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Paper Abstract

Extreme ultraviolet (EUV) photons expose photoresists by complex interactions starting with photoionization that create primary electrons (∼80  eV), followed by ionization steps that create secondary electrons (10 to 60 eV). Ultimately, these lower energy electrons interact with specific molecules in the resist that cause the chemical reactions which are responsible for changes in solubility. The mechanisms by which these electrons interact with resist components are key to optimizing the performance of EUV resists. A resist exposure chamber was built to probe the behavior of electrons within photoresists. Resists were exposed under electron beam and then developed; ellipsometry was used to identify the dependence of electron penetration depth and number of reactions on dose and energy. Additionally, our group has updated a robust software that uses a first principles-based Monte Carlo model called low-energy electron scattering in solids (LESiS) to track secondary electron production, penetration depth, and reaction mechanisms within materials-defined environments. LESiS was used to model the thickness loss experiments to validate its performance with respect to simulated electron penetration depths to inform future modeling work.

Paper Details

Date Published: 13 October 2015
PDF: 6 pages
J. Micro/Nanolith. 14(4) 043502 doi: 10.1117/1.JMM.14.4.043502
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 14, Issue 4
Show Author Affiliations
Amrit Kasuik Narasimhan, SUNY Polytechnic Institute (United States)
Steven Grzeskowiak, SUNY CNSE/SUNYIT (United States)
Bharath Srivats, SUNY CNSE/SUNYIT (United States)
Henry C. Herbol, SUNY CNSE/SUNYIT (United States)
Liam Wisehart, SUNY CNSE/SUNYIT (United States)
Jonathon L. Schad, SUNY CNSE/SUNYIT (United States)
Chris Kelly, SUNY CNSE/SUNYIT (United States)
William Earley, SUNY CNSE/SUNYIT (United States)
Leonidas E. Ocola, Argonne National Lab. (United States)
Mark Neisser, SUNY Poly SEMATECH (United States)
Gregory H. Denbeaux, SUNY CNSE/SUNYIT (United States)
Robert L. Brainard, SUNY CNSE/SUNYIT (United States)


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