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Journal of Micro/Nanolithography, MEMS, and MOEMS

Multistack structure for an extreme-ultraviolet pellicle with out-of-band radiation reduction
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Paper Abstract

We report on out-of-band (OoB) radiation that can cause degradation to the image quality in extreme-ultraviolet (EUV) lithography systems. We investigated the effect of OoB radiation with an EUV pellicle and found the maximum allowable reflectivity of OoB radiation from the EUV pellicle that can satisfy certain criteria (i.e., the image critical dimension error, contrast, and normalized image log slope). We suggested a multistack EUV pellicle that can obtain a high EUV transmission, minimal reflectivity of OoB radiation, and sufficient deep ultraviolet transmission for defect inspection and alignment without removing the EUV pellicle in an EUV lithography system.

Paper Details

Date Published: 7 October 2015
PDF: 6 pages
J. Micro/Nanolith. MEMS MOEMS 14(4) 043501 doi: 10.1117/1.JMM.14.4.043501
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 14, Issue 4
Show Author Affiliations
Sung-Gyu Lee, Hanyang Univ. (Republic of Korea)
Guk-Jin Kim, Hanyang Univ. (Republic of Korea)
In-Seon Kim, Hanyang Univ. (Republic of Korea)
Jin-ho Ahn, Hanyang Univ. (Republic of Korea)
Jin-Goo Park, Hanyang Univ. (Republic of Korea)
Hye-Keun Oh, Hanyang Univ. (Republic of Korea)

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