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Journal of Micro/Nanolithography, MEMS, and MOEMS

Topography of nanometric thin films with three-wavelength digital interferometry
Author(s): Pascal Picart; Mokrane Malek; Jorge Garcia-Sucerquia; Mathieu Edely; Rahma Moalla; Nicolas Delorme; Jean-François Bardeau
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Paper Abstract

This paper discusses a method to measure the thickness of thin layers deposited on a reflective substrate. An interferometer with three wavelengths produces color interferences. A color sensor records the tint that is produced. The color interferences are approximated by a model based on the measurement of the laser intensities obtained with the reference mirror only. An iterative process leads to unambiguous algorithmic convergence and high accuracy thickness measurement. This method is simple, robust, compact, and single shot. The method does not need angular scanning over the field of measurement (about 75  mm2). The measurement on the surface yields a histogram of the thickness distribution and there is no requirement for any reference points (e.g., no need to make a groove or a walk on the layer). A thickness measurement performance of 50 nm was demonstrated for homogeneous polymer films deposited on a silicon wafer. The setup and digital image processing are discussed.

Paper Details

Date Published: 11 September 2015
PDF: 6 pages
J. Micro/Nanolith. MEMS MOEMS 14(4) 041309 doi: 10.1117/1.JMM.14.4.041309
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 14, Issue 4
Show Author Affiliations
Pascal Picart, Univ. du Maine (France)
Mokrane Malek, Univ. du Maine (France)
Jorge Garcia-Sucerquia, Univ. du Maine (France)
Univ. Nacional de Colombia Sede Medellín (Colombia)
Mathieu Edely, Univ. du Maine (France)
Rahma Moalla, Univ. du Maine (France)
Nicolas Delorme, Univ. du Maine (France)
Jean-François Bardeau, Univ. du Maine (France)

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