Share Email Print
cover

Journal of Micro/Nanolithography, MEMS, and MOEMS

Investigation of factors affecting backside hotspot localization in infrared lock-in thermography
Author(s): Nicholas Chiu Yen Koh; Kok Swee Sim; Tiong Min Hoe
Format Member Price Non-Member Price
PDF $20.00 $25.00

Paper Abstract

Infrared lock-in thermography (IR-LIT) is a fault localization technique that serves the purpose of detecting a local heat source or hotspot emitted by the faulty area. Performing backside hotspot localization overcomes the limitation during frontside hotspot localization, especially for shorted areas that emit a low heat source. In order to produce better hotspot localization from the package backside, it is important to study more of the factors affecting backside hotspot localization, including the power settings of the device, the lock-in frequency, and the die thickness of the packages. Power packages are inspected using a tool with varying power and frequency settings. The results are collected by observing the size of the hotspot and by recording the time taken for the hotspot to appear. To investigate the die thickness, the die surface is grinded from the backside of the die and the thickness of the die was measured using x-rays. The relationship between the power settings, the frequency settings, and the die thickness does show significant changes to the hotspot size and the time taken to generate a hotspot.

Paper Details

Date Published: 3 September 2015
PDF: 12 pages
J. Micro/Nanolith. 14(3) 035501 doi: 10.1117/1.JMM.14.3.035501
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 14, Issue 3
Show Author Affiliations
Nicholas Chiu Yen Koh, Multimedia Univ. (Malaysia)
Kok Swee Sim, Multimedia Univ. (Malaysia)
Tiong Min Hoe, Infineon Technologies (Malaysia) Sdn Bhd (Malaysia)


© SPIE. Terms of Use
Back to Top