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Journal of Micro/Nanolithography, MEMS, and MOEMS

Cantilever type radio frequency microelectromechanical systems shunt capacitive switch design and fabrication
Author(s): Kaan Demirel; Erdem Yazgan; Şimşek Demir; Tayfun Akın
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Paper Abstract

A new cantilever type radio frequency microelectromechanical systems (RF MEMS) shunt capacitive switch design and fabrication is presented. The mechanical, electromechanical, and electromagnetic designs are carried out to get <40  V actuation voltage, high isolation, and low insertion loss for 24 and 35 GHz and the fabrication is carried out for 24 GHz RF MEMS switch. The fabricated switch shows lower than 0.35 dB insertion loss up to 40 GHz and greater than 20 dB isolation at 22 to 29 GHz frequency band. An insignificant change is observed on RF performance at 24 GHz (ΔS11=1  dB, ΔS21<0.1  dB) after 200°C thermal treatment for 30 min. The switch is fabricated on quartz wafer using an in-house surface micromachining process with amorphous silicon sacrificial layer structure. Total MEMS bridge thickness is aimed to be 4  μm and consists of 2-μm-thick sputtered and 2-μm-thick electroplated gold layers. The bridge bending models and pull-down voltage simulations are carried out for different stress levels and equivalent Young’s modulus (Eavg).

Paper Details

Date Published: 21 September 2015
PDF: 10 pages
J. Micro/Nanolith. MEMS MOEMS 14(3) 035005 doi: 10.1117/1.JMM.14.3.035005
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 14, Issue 3
Show Author Affiliations
Kaan Demirel, Hacettepe Univ. (Turkey)
Middle East Technical Univ. (Turkey)
Erdem Yazgan, Hacettepe Univ. (Turkey)
TED Univ. (Turkey)
Şimşek Demir, Middle East Technical Univ. (Turkey)
Tayfun Akın, Middle East Technical Univ. (Turkey)


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