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Journal of Micro/Nanolithography, MEMS, and MOEMS

Study on electrical parameter to nano thin-film transistor under GPa-order stress
Author(s): Tieying Ma; Sen Yang; Yidong Liu; Huiquan Wang
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Paper Abstract

Nano thinfilm transistor (TFT) is fabricated at the root of a beam, which becomes the maximum stress area when the beam is bent. In this process, a probe is used to bend the beam and produce GPa-order mechanical stress. The electrical characteristic of TFT under different GPa stress has been studied. Threshold voltage VT, relative drain current change ΔIds/Ids, and transconductance gm present a nonlinear relationship with increasing GPa-order stress. Analyzed from experimental results, channel piezoresistivity effect below 1.82 GPa stress, energy valley splitting, large change of valence effective mass from 1.82 to 2.08 GPa, and interface effect above 2.08 GPa are the factors of nonlinear change of parameter with GPa-order mechanical stress.

Paper Details

Date Published: 7 August 2015
PDF: 5 pages
J. Micro/Nanolith. MEMS MOEMS 14(3) 035001 doi: 10.1117/1.JMM.14.3.035001
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 14, Issue 3
Show Author Affiliations
Tieying Ma, China Jiliang Univ. (China)
Zhejiang University (China)
Sen Yang, China Jiliang Univ. (China)
Yidong Liu, Zhejiang Univ. (China)
Huiquan Wang, Zhejiang Univ. (China)

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