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Journal of Micro/Nanolithography, MEMS, and MOEMS • Open Access

Optimized lithography process for through-silicon vias-fabrication using a double-sided (structured) photomask for mask aligner lithography
Author(s): Tina Weichelt; Lorenz Stuerzebecher; Uwe D. Zeitner

Paper Abstract

Through-silicon vias (TSV) are very important for wafer-level packaging as they provide patterning holes through thick silicon dies to integrate and interconnect devices which are stacked in the z-direction. For economic processing, TSV fabrication primarily needs to be cost effective, especially for a high throughput. Furthermore, a lithography process for TSV has to be stable enough to allow patterning on prestructured substrates with inhomogeneous topography. This can be addressed by an exposure process which offers a large depth of focus. We have developed a mask-aligner lithography process based on the use of a double-sided photomask to realize aerial images that meet these constraints.

Paper Details

Date Published: 13 August 2015
PDF: 6 pages
J. Micro/Nanolith. 14(3) 034501 doi: 10.1117/1.JMM.14.3.034501
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 14, Issue 3
Show Author Affiliations
Tina Weichelt, Friedrich-Schiller-Univ. Jena (Germany)
Lorenz Stuerzebecher, Friedrich-Schiller-Univ. Jena (Germany)
Uwe D. Zeitner, Fraunhofer-Institut für Angewandte Optik und Feinmechanik (Germany)
Friedrich-Schiller-Univ. Jena (Germany)

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