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Journal of Micro/Nanolithography, MEMS, and MOEMS

Critical dimension control using ultrashort laser for improving wafer critical dimension uniformity
Author(s): Dan Avizemer; Ofir Sharoni; Sergey Oshemkov; Avi Cohen; Asaf Dayan; Ranjan Khurana; Dave Kewley
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Paper Abstract

Requirements for control of critical dimension (CD) become more demanding as the integrated circuit (IC) feature size specifications become tighter and tighter. Critical dimension control, also known as CDC, is a well-known laser-based process in the IC industry that has proven to be robust, repeatable, and efficient in adjusting wafer CD uniformity (CDU) [

Paper Details

Date Published: 11 September 2015
PDF: 7 pages
J. Micro/Nanolith. MEMS MOEMS 14(3) 033510 doi: 10.1117/1.JMM.14.3.033510
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 14, Issue 3
Show Author Affiliations
Dan Avizemer, Carl Zeiss SMS Ltd. (Israel)
Ofir Sharoni, Carl Zeiss SMS Ltd. (Israel)
Sergey Oshemkov, Carl Zeiss SMS Ltd. (Israel)
Avi Cohen, Carl Zeiss SMS Ltd. (Israel)
Asaf Dayan, Carl Zeiss SBE, LLC (United States)
Ranjan Khurana, Micron Technology, Inc. (United States)
Dave Kewley, Micron Technology, Inc. (United States)

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