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Journal of Micro/Nanolithography, MEMS, and MOEMS

Toward 10 nm half-pitch in extreme ultraviolet lithography: results on resist screening and pattern collapse mitigation techniques
Author(s): Tero S. Kulmala; Michaela Vockenhuber; Elizabeth Buitrago; Roberto Fallica; Yasin Ekinci
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Paper Abstract

Extreme ultraviolet (EUV) lithography is considered to be the most promising option to continue with the downscaling of integrated circuits in high-volume manufacturing. One of the main challenges, however, is the development of EUV resists that fulfill the strict sensitivity, resolution, and line-edge roughness specifications of future nodes. Here, we present our EUV resist screening results of a wide range of EUV resists in their developmental phase from our collaborators from around the world. Furthermore, we have carried out extensive experiments to improve the processing parameters of the resists as well as to identify the optimal wafer pretreatment methods in order to optimize the adhesion of the resist to the substrate. We show that even though significant improvements in performance of chemically amplified resists have been achieved, pattern collapse is still the major process-limiting factor as the resolution decreases below 14 nm half-pitch.

Paper Details

Date Published: 7 August 2015
PDF: 9 pages
J. Micro/Nanolith. MEMS MOEMS 14(3) 033507 doi: 10.1117/1.JMM.14.3.033507
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 14, Issue 3
Show Author Affiliations
Tero S. Kulmala, Paul Scherrer Institute (Switzerland)
Michaela Vockenhuber, Paul Scherrer Institute (Switzerland)
Elizabeth Buitrago, Paul Scherrer Institute (Switzerland)
Roberto Fallica, Paul Scherrer Institut (Switzerland)
Yasin Ekinci, Paul Scherrer Institute (Switzerland)

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