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Journal of Micro/Nanolithography, MEMS, and MOEMS

Molecular dynamics simulation on selective etching of α-quartz and amorphous quartz substrate using low-energy argon ion bombardment model in dry etching process
Author(s): Abdul Haadi Abdul Manap; Khairudin Mohamed
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Paper Abstract

We investigated the physical sputtering of low-energy argon bombardment onto α-quartz and amorphous quartz substrate using dynamics simulations. We reported the effects of etching selectivity, the effect of surface temperature, Ts, and the effect of incident energy, Ei on sputtering yield. The second generation charge-optimized many body (COMB10) potential was utilized to model the interatomic potential of quartz substrates. Simulations were conducted at incident energies of Ei=50, 100, and 150 eV and substrate temperatures of Ts=300, 500, and 800 K. α-quartz shows higher sputtering yield compared to amorphous quartz at any given incident energy, Ei and substrate temperature, Ts. α-quartz has also produced more stoichiometric yield compared to amorphous quartz.

Paper Details

Date Published: 21 July 2015
PDF: 5 pages
J. Micro/Nanolith. 14(3) 033505 doi: 10.1117/1.JMM.14.3.033505
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 14, Issue 3
Show Author Affiliations
Abdul Haadi Abdul Manap, Univ. Sains Malaysia (Malaysia)
Khairudin Mohamed, Univ. Sains Malaysia (Malaysia)

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