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Journal of Micro/Nanolithography, MEMS, and MOEMS

Line edge roughness frequency analysis during pattern transfer in semiconductor fabrication
Author(s): Lei Sun; Wenhui Wang; Genevieve Beique; Min G. Sung; Obert R. Wood; Ryoung-Han Kim
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Paper Abstract

Line edge roughness (LER) and line width roughness (LWR) are analyzed based on the frequency domain 3σ LER characterization methodology during pattern transfer in a self-aligned double patterning (SADP) process. The power spectrum of the LER/LWR is divided into three regions: low frequency, middle frequency, and high frequency regions. Three standard deviation numbers are used to characterize the LER/LWR in the three frequency regions. Pattern wiggling is also detected quantitatively during LER/LWR transfer in the SADP process.

Paper Details

Date Published: 13 July 2015
PDF: 5 pages
J. Micro/Nanolith. MEMS MOEMS 14(3) 033501 doi: 10.1117/1.JMM.14.3.033501
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 14, Issue 3
Show Author Affiliations
Lei Sun, GLOBALFOUNDRIES Inc. (United States)
Wenhui Wang, GLOBALFOUNDRIES Inc. (United States)
Genevieve Beique, GLOBALFOUNDRIES Inc. (United States)
Min G. Sung, GLOBALFOUNDRIES Inc. (United States)
Obert R. Wood, GLOBALFOUNDRIES Inc. (United States)
Ryoung-Han Kim, GLOBALFOUNDRIES Inc. (United States)

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